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Usual retention tests are based on the application of read pulses to a ferroelectric sample while the charge response is recorded. These tests, however, do not allow the continuous recording of retention as after the application of the read pulse the ferroelectric is in a new state defined by the direction of the read pulse. We propose a novel approach which is based on the nondestructive readout...
Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ∼ 500 µm diameter to evaluate ferroelectric properties...
The electromechanical properties of ferroelectric materials can be modified by doping in order to meet the requirements for various applications. This is well known in PZT ceramics, in which even a very small amount of the dopant element affects macroscopic properties and makes the ferroelectric hard or soft. We investigate whether hard and soft behavior occurs also due to doping of PBZ, which, to...
The film thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology. Experimental P-E hysteresis of metal-ferroelectric-metal capacitor structures could be reproduced by a Preisach-based ferroelectric simulation model implemented in a commercially available TCAD environment...
Monitoring non-ionizing radiant energy is increasingly demanded for many applications such as automobile, biomedical and security system. Thermal type infrared (IR) sensors can operate at room temperature and pyroelectric materials have high sensitivity and accuracy for that application. Working as thermal transducer pyroelectric sensor converts the non-quantified thermal flux into the output measurable...
001-, 110-, 111-oriented (Ag1−xLix)NbO3 (ALN) films with x=0.05 (ALN05), 0.1 (ALN10), and 0.15 (ALN15) were fabricated on (001), (110) and (111) SrTiO3 (STO) substrates by pulse laser deposition (PLD). The surface texture of the ALN films ware dependent on the crystal orientation of STO substrates. All the ALN films exhibited a ferroelectric behavior. The ALN films with x=0.1 deposited on (111) STO...
Piezoelectric PMN-PIN-PT as well as lead-free KN and KNL-NST analogues in the form of single crystals or textured ceramics were investigated as a function of temperature and/or applied stress using Raman spectroscopy and dilatometry. The results reveal: 1) the 1st order character of the 120°C-transition in PMN-PIN-PT; 2) a previously unreported stress dependent phase transition in KN at 70°C; 3) important...
A vertically integrated nanogenerator (VING) refers to the new generation of mechanical energy harvesting devices: arrays of piezoelectric and semiconducting nanowires are grown perpendicularly to a substrate and appropriate electrodes enable the charges circulation through an external electrical load. In this letter, an equivalent circuit of VING is proposed. This model takes into account the effect...
The aim of this study was to investigate the electrical properties of (1−x)[Ba0.85Ca0.15Zr0.1Ti0.9]O3 - x[(BiZn0.5Ti0.5)O3] ceramics system for x = 0.00 − 0.10. The (1−x)BCZT-xBZT ceramics were fabricated via solid state reaction technique. The samples were calcined and sintered at 925°C for 6 h and 1370°C for 3 h, respectively. Phase formation and microstructure of (1−x)BCZT-xBZT ceramics were studied...
Perovskite ferroelectric materials present evidently anisotropic characteristics on piezoelectricity. Here we successfully controlled the morphology and orientations of BaTiO3 particles and obtained the highly <001> oriented film by a facile interfacial self-assembled method. A high output flexible piezoelectric generator based on highly oriented BaTiO3 film was reported. The <001> oriented...
(Co-Ti-O)/Bi-Ti-O multilayer films with 9 Co-Ti-O layers are prepared by tandem sputtering. The high frequency soft magnetic properties and magneto-impedance effects were investigated in the frequency range from 0.1 to 10 GHz. The films maintain the real part of permeability μ′ = 30 up to a few GHz, and exhibit a clear peak of imaginary part of permeability µ″ = 76.4 at the resonance frequency (fr...
Here we present a high performance 3D MEMS ultrasound transducer technology called Clarinet™ based on a combination of micromachined dome-shaped piezoelectric resonators arranged in a flexible architecture. In a drastic departure from typical PMUT membranes, our high performance PZNT thin film is integrated into a 3D dome-shaped membrane as the transducer's building block. Three different types of...
This work was originally motivated by the search for high-temperature piezoceramic materials with low acoustic impedance and high electromechanical coupling. The temperature and pressure behavior of two PZT-based materials with engineered porosity, Pz31 & Pz36 developed by Meggitt A/S, were studied. We considered operating environments of up to 200°C and 20,000 psi. Previous experimental results...
The ZnO thin films in Al/ZnO/Pt/Ti/SiO2/Si Bulk Acoustic Wave (BAW) resonators are realized by a reactive Pulsed Laser Deposition (PLD) technique. It is of most interest to improve their piezoelectric characteristics. These later are intimately linked to the microstructure, the texture and the growth conditions. In this work, the piezoelectric characteristics of ZnO thin films have been investigated...
The progress in lead zirconate titanate Pb(Zrx,Ti1−x)O3 (PZT) thin film deposition and integration technology has led to an exponential growth of piezoelectric micro-electromechanical systems (piezo-MEMS), particularly for pure actuator devices such as inkjet print-heads and autofocus lenses. These devices rely on the transverse effective piezoelectric coefficient e31,f in the converse mode. Thin...
A determination method to identify the piezoelectric longitudinal charge coefficient d33 for thin films on substrate is presented. Finite Element (FE) simulations and measurements at PZT on bulk silicon show correlations of the substrate characteristics and electrode size subject to the displacement of an electric actuated piezoelectric material. FE models are used to identify the d33 independent...
The piezoelectric crystal with high electromechanical coupling coefficient have been focused as it may trigger a revolution in the performance of next generation devices. The characteristics of acoustic waves propagation in the single crystal are theoretically investigated, which is useful for a fundamental understanding on wave phenomena and for potential applications. The guided wave with horizontal...
We report on microstructure evolution and enhancement of longitudinal and transverse piezoelectric responses of AlN thin film with partial substitution of Al3+ ions by Sc3+ ions. Piezoelectric AlScN alloys are very promising for energy harvesting and sensor applications. AlScN 83/87 alloys exhibit a figure of merit that allows for a 60% efficiency increase as compared to pure AlN.
This paper proposes an asymmetric piezoelectric multimorph ceramic to improve sound quality of the piezoelectric acoustic actuator which means flat and smooth frequency response characteristics on a wide playing frequency range. In order to investigate the effect of asymmetric piezoelectric multimorph ceramic on the frequency response characteristics of the piezoelectric acoustic actuator, we compared...
It is known that the restoring force acting on a disequilibrated domain wall is the key factor, which controls macroscopic values of extrinsic (i.e. domain wall) contributions to permittivity and piezoelectricity. Considering the bulk properties of perovskites, the main contribution to the restoring force comes from the interaction of domain walls with so called pinning centers (PnCs) such as crystal...
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